JPS5773979A - Field effect transistor - Google Patents

Field effect transistor

Info

Publication number
JPS5773979A
JPS5773979A JP55150362A JP15036280A JPS5773979A JP S5773979 A JPS5773979 A JP S5773979A JP 55150362 A JP55150362 A JP 55150362A JP 15036280 A JP15036280 A JP 15036280A JP S5773979 A JPS5773979 A JP S5773979A
Authority
JP
Japan
Prior art keywords
layer
type
semiconductor layer
gaas
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55150362A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0219623B2 (en]
Inventor
Keiichi Ohata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP55150362A priority Critical patent/JPS5773979A/ja
Publication of JPS5773979A publication Critical patent/JPS5773979A/ja
Publication of JPH0219623B2 publication Critical patent/JPH0219623B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP55150362A 1980-10-27 1980-10-27 Field effect transistor Granted JPS5773979A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55150362A JPS5773979A (en) 1980-10-27 1980-10-27 Field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55150362A JPS5773979A (en) 1980-10-27 1980-10-27 Field effect transistor

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP63285123A Division JP2553673B2 (ja) 1988-11-11 1988-11-11 電界効果トランジスタ

Publications (2)

Publication Number Publication Date
JPS5773979A true JPS5773979A (en) 1982-05-08
JPH0219623B2 JPH0219623B2 (en]) 1990-05-02

Family

ID=15495327

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55150362A Granted JPS5773979A (en) 1980-10-27 1980-10-27 Field effect transistor

Country Status (1)

Country Link
JP (1) JPS5773979A (en])

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58162070A (ja) * 1982-03-19 1983-09-26 Matsushita Electric Ind Co Ltd 電界効果トランジスタ
JPS6030177A (ja) * 1983-07-28 1985-02-15 Nec Corp 半導体装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS577165A (en) * 1980-06-17 1982-01-14 Fujitsu Ltd Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS577165A (en) * 1980-06-17 1982-01-14 Fujitsu Ltd Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58162070A (ja) * 1982-03-19 1983-09-26 Matsushita Electric Ind Co Ltd 電界効果トランジスタ
JPS6030177A (ja) * 1983-07-28 1985-02-15 Nec Corp 半導体装置

Also Published As

Publication number Publication date
JPH0219623B2 (en]) 1990-05-02

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